The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors

Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored a promising device candidate for three-dimensional (3D) NAND memory application. FE HfO2 exhibits long retention over 10 years, high endurance 1012 cycles, speed sub-ns polarization switching, and remnant of 10-30 {\mu}C/cm2. However, the performance Fe-FETs is known to be much worse than capacitors, which not completely understood. In this work, we developed comprehensive Fe-FET model based on charge balance framework. The role impact leakage-assist-switching mechanism characteristics M/FE/DE/S (Metal/Ferroelectric/Dielectric/Semiconductor) stack studied. It found that FE/DE interface DE layer instead critical determine Fe-FETs, experimental can well explained by model, where discrepancy between capacitors successfully